1.Embedded non-volatile memory (MRAM, RRAM, PCRAM and eFlash) architecture design.
2.Read and write critical path design and analysis.
3.Design of key building blocks (sensing, analog, high voltage, DFT).
4.Chip-level design verification.
5.Embedded non-volatile memory compiler and productization.
6.Co-work with product / reliability engineer on silicon characterization and reliability qualification.
1.M.S or Ph.D. degree in EE / CS or related field.
2.5 years of experience on memory circuit design.
3.The candidate should have good track records on memory product and technology development.